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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC4793(LBSAN,F,M)
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16490802SC4793(LBSAN,F,M) ImageToshiba Semiconductor and Storage

2SC4793(LBSAN,F,M)

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Specifications
  • Part Number
    2SC4793(LBSAN,F,M)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 1A 230V TO220-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SC4793(LBSAN,F,M).pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    230V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 50mA, 500mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220NIS
  • Series
    -
  • Power - Max
    2W
  • Packaging
    Bulk
  • Package / Case
    TO-220-3 Full Pack
  • Other Names
    2SC4793(LBSANFM)
    2SC4793LBSANFM
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 230V 1A 100MHz 2W Through Hole TO-220NIS
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Current - Collector (Ic) (Max)
    1A

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