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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD2406-Y(F)
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45239072SD2406-Y(F) ImageToshiba Semiconductor and Storage

2SD2406-Y(F)

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Specifications
  • Part Number
    2SD2406-Y(F)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 80V 4A TO220NIS
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SD2406-Y(F).pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 300mA, 3A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220NIS
  • Series
    -
  • Power - Max
    25W
  • Packaging
    Tube
  • Package / Case
    TO-220-3 Full Pack
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    8MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 80V 4A 8MHz 25W Through Hole TO-220NIS
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 500mA, 5V
  • Current - Collector Cutoff (Max)
    30µA (ICBO)
  • Current - Collector (Ic) (Max)
    4A

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