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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2SJ380(F)
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4138332SJ380(F) ImageToshiba Semiconductor and Storage

2SJ380(F)

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Specifications
  • Part Number
    2SJ380(F)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 100V 12A TO220NIS
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.2SJ380(F).pdf
    2.2SJ380(F).pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220NIS
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    210 mOhm @ 6A, 10V
  • Power Dissipation (Max)
    35W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3 Full Pack
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1100pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    48nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    P-Channel 100V 12A (Ta) 35W (Tc) Through Hole TO-220NIS
  • Current - Continuous Drain (Id) @ 25°C
    12A (Ta)

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