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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > MT3S113P(TE12L,F)
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1058309MT3S113P(TE12L,F) ImageToshiba Semiconductor and Storage

MT3S113P(TE12L,F)

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Reference Price(In US Dollars)

In stock
1000+
$0.423
2000+
$0.395
5000+
$0.375
10000+
$0.36
25000+
$0.35
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Specifications
  • Part Number
    MT3S113P(TE12L,F)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    RF SIGE HETEROJUNCTION BIPOLAR N
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MT3S113P(TE12L,F).pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    5.3V
  • Transistor Type
    NPN
  • Supplier Device Package
    PW-MINI
  • Series
    -
  • Power - Max
    1.6W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-243AA
  • Other Names
    MT3S113P(TE12LF)
    MT3S113P(TE12LF)TR
  • Operating Temperature
    150°C (TJ)
  • Noise Figure (dB Typ @ f)
    1.45dB @ 1GHz
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    12 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    10.5dB
  • Frequency - Transition
    7.7GHz
  • Detailed Description
    RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 30mA, 5V
  • Current - Collector (Ic) (Max)
    100mA

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