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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1444ATE85LF
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RN1444ATE85LF

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Specifications
  • Part Number
    RN1444ATE85LF
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 0.2W S-MINI
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RN1444ATE85LF.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    20V
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 3mA, 30mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    S-Mini
  • Series
    -
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    RN1444-A(TE85L,F)
    RN1444ATE85LFTR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    30MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 300mA 30MHz 200mW Surface Mount S-Mini
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 4mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    300mA

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