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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1901FETE85LF

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RN1901FETE85LF Image

Toshiba Semiconductor and Storage

RN1901FETE85LF

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Specifications

Part Number

RN1901FETE85LF
Manufacturer/Brand

TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Stock Quantity

In stock
Description

TRANS 2NPN PREBIAS 0.1W ES6
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

RN1901FETE85LF.pdf
ECAD Model
Voltage - Collector Emitter Breakdown (Max)

50V
Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA
Transistor Type

2 NPN - Pre-Biased (Dual)
Supplier Device Package

ES6
Series

-
Resistor - Emitter Base (R2)

4.7 kOhms
Resistor - Base (R1)

4.7 kOhms
Power - Max

100mW
Packaging

Tape & Reel (TR)
Package / Case

SOT-563, SOT-666
Other Names

RN1901FE(TE85L,F)
RN1901FETE85LFTR
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Frequency - Transition

250MHz
Detailed Description

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V
Current - Collector Cutoff (Max)

100nA (ICBO)
Current - Collector (Ic) (Max)

100mA

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