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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN4907FE,LF(CB
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1176765RN4907FE,LF(CB ImageToshiba Semiconductor and Storage

RN4907FE,LF(CB

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Reference Price(In US Dollars)

In stock
1+
$0.22
10+
$0.198
25+
$0.18
100+
$0.13
250+
$0.076
500+
$0.063
1000+
$0.043
Inquiry Online
Specifications
  • Part Number
    RN4907FE,LF(CB
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP PREBIAS 0.1W ES6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    ES6
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    100mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    RN4907FE(T5LFT)CT
    RN4907FE(T5LFT)CT-ND
    RN4907FELF(CBCT
    RN4907FELF(CTCT
    RN4907FELF(CTCT-ND
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz, 200MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
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