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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK12E80W,S1X
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3063680

TK12E80W,S1X

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Reference Price(In US Dollars)

In stock
1+
$3.80
50+
$3.053
100+
$2.782
500+
$2.253
1000+
$1.90
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Specifications
  • Part Number
    TK12E80W,S1X
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 800V 11.5A TO220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TK12E80W,S1X.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 570µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220
  • Series
    DTMOSIV
  • Rds On (Max) @ Id, Vgs
    450 mOhm @ 5.8A, 10V
  • Power Dissipation (Max)
    165W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    TK12E80W,S1X(S
    TK12E80WS1X
  • Operating Temperature
    150°C
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1400pF @ 300V
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    800V
  • Detailed Description
    N-Channel 800V 11.5A (Ta) 165W (Tc) Through Hole TO-220
  • Current - Continuous Drain (Id) @ 25°C
    11.5A (Ta)

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