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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK35N65W5,S1F
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2867417TK35N65W5,S1F ImageToshiba Semiconductor and Storage

TK35N65W5,S1F

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Reference Price(In US Dollars)

In stock
30+
$8.571
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Specifications
  • Part Number
    TK35N65W5,S1F
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 35A TO-247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TK35N65W5,S1F.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4.5V @ 2.1mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-247
  • Series
    DTMOSIV
  • Rds On (Max) @ Id, Vgs
    95 mOhm @ 17.5A, 10V
  • Power Dissipation (Max)
    270W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    TK35N65W5,S1F(S
    TK35N65W5,S1F-ND
    TK35N65W5S1F
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4100pF @ 300V
  • Gate Charge (Qg) (Max) @ Vgs
    115nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 35A (Ta) 270W (Tc) Through Hole TO-247
  • Current - Continuous Drain (Id) @ 25°C
    35A (Ta)

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