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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK55D10J1(Q)
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TK55D10J1(Q)

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Specifications
  • Part Number
    TK55D10J1(Q)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 55A TO220W
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TK55D10J1(Q).pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.3V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220(W)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    10.5 mOhm @ 27A, 10V
  • Power Dissipation (Max)
    140W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    5700pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 55A (Ta) 140W (Tc) Through Hole TO-220(W)
  • Current - Continuous Drain (Id) @ 25°C
    55A (Ta)

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