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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > TTC004B,Q
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2647424TTC004B,Q ImageToshiba Semiconductor and Storage

TTC004B,Q

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Reference Price(In US Dollars)

In stock
1+
$0.58
10+
$0.491
25+
$0.43
100+
$0.369
250+
$0.319
500+
$0.27
1000+
$0.209
2500+
$0.19
5000+
$0.178
Inquiry Online
Specifications
  • Part Number
    TTC004B,Q
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 160V 1.5A TO126N
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TTC004B,Q.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    160V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-126N
  • Series
    -
  • Power - Max
    10W
  • Packaging
    Tube
  • Package / Case
    TO-225AA, TO-126-3
  • Other Names
    TTC004B,Q(S
    TTC004BQ
    TTC004BQ(S
    TTC004BQ(S-ND
    TTC004BQS
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    14 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 160V 1.5A 100MHz 10W Through Hole TO-126N
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    140 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    1.5A

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