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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TP65H050WS
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4162738TP65H050WS ImageTransphorm

TP65H050WS

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Reference Price(In US Dollars)

In stock
1+
$18.62
10+
$16.928
30+
$15.658
120+
$14.389
270+
$13.119
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Specifications
  • Part Number
    TP65H050WS
  • Manufacturer/Brand
    Transphorm
  • Stock Quantity
    In stock
  • Description
    650 V 34 A CASCODE GAN FET
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TP65H050WS.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4.8V @ 700µA
  • Vgs (Max)
    ±20V
  • Technology
    GaNFET (Gallium Nitride)
  • Supplier Device Package
    TO-247-3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    60 mOhm @ 22A, 10V
  • Power Dissipation (Max)
    119W (Tc)
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 400V
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3
  • Current - Continuous Drain (Id) @ 25°C
    34A (Tc)

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