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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > TPD3215M
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5146698TPD3215M ImageTransphorm

TPD3215M

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Reference Price(In US Dollars)

In stock
1+
$205.65
10+
$195.725
25+
$188.633
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Specifications
  • Part Number
    TPD3215M
  • Manufacturer/Brand
    Transphorm
  • Stock Quantity
    In stock
  • Description
    CASCODE GAN HB 600V 70A MODULE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TPD3215M.pdf
  • Vgs(th) (Max) @ Id
    -
  • Supplier Device Package
    Module
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    34 mOhm @ 30A, 8V
  • Power - Max
    470W
  • Packaging
    Bulk
  • Package / Case
    Module
  • Other Names
    TPH3215M
    TPH3215M-ND
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2260pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    28nC @ 8V
  • FET Type
    2 N-Channel (Half Bridge)
  • FET Feature
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    Mosfet Array 2 N-Channel (Half Bridge) 600V 70A (Tc) 470W Through Hole Module
  • Current - Continuous Drain (Id) @ 25°C
    70A (Tc)

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