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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI6423DQ-T1-GE3
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SI6423DQ-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$1.82
10+
$1.634
25+
$1.541
100+
$1.313
250+
$1.233
500+
$1.079
1000+
$0.894
Inquiry Online
Specifications
  • Part Number
    SI6423DQ-T1-GE3
  • Manufacturer/Brand
    Vishay / Siliconix
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 12V 8.2A 8-TSSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI6423DQ-T1-GE3.pdf
  • ECAD Model
  • Voltage - Test
    -
  • Voltage - Breakdown
    8-TSSOP
  • Vgs(th) (Max) @ Id
    8.5 mOhm @ 9.5A, 4.5V
  • Vgs (Max)
    1.8V, 4.5V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    TrenchFET®
  • RoHS Status
    Digi-Reel®
  • Rds On (Max) @ Id, Vgs
    8.2A (Ta)
  • Polarization
    8-TSSOP (0.173", 4.40mm Width)
  • Other Names
    SI6423DQ-T1-GE3DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Manufacturer Part Number
    SI6423DQ-T1-GE3
  • Input Capacitance (Ciss) (Max) @ Vds
    110nC @ 5V
  • IGBT Type
    ±8V
  • Gate Charge (Qg) (Max) @ Vgs
    800mV @ 400µA
  • FET Feature
    P-Channel
  • Expanded Description
    P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET P-CH 12V 8.2A 8-TSSOP
  • Current - Continuous Drain (Id) @ 25°C
    12V
  • Capacitance Ratio
    1.05W (Ta)

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