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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIE810DF-T1-E3
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5153831SIE810DF-T1-E3 ImageVishay Siliconix

SIE810DF-T1-E3

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Reference Price(In US Dollars)

In stock
3000+
$1.649
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Specifications
  • Part Number
    SIE810DF-T1-E3
  • Manufacturer/Brand
    Vishay / Siliconix
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 20V 60A 10-POLARPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SIE810DF-T1-E3.pdf
  • Voltage - Test
    13000pF @ 10V
  • Voltage - Breakdown
    10-PolarPAK® (L)
  • Vgs(th) (Max) @ Id
    1.4 mOhm @ 25A, 10V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    TrenchFET®
  • RoHS Status
    Tape & Reel (TR)
  • Rds On (Max) @ Id, Vgs
    60A (Tc)
  • Polarization
    10-PolarPAK® (L)
  • Other Names
    SIE810DF-T1-E3TR
    SIE810DFT1E3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Manufacturer Part Number
    SIE810DF-T1-E3
  • Input Capacitance (Ciss) (Max) @ Vds
    300nC @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    2V @ 250µA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET N-CH 20V 60A 10-POLARPAK
  • Current - Continuous Drain (Id) @ 25°C
    20V
  • Capacitance Ratio
    5.2W (Ta), 125W (Tc)

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