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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHG33N65E-GE3
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4710192SIHG33N65E-GE3 ImageVishay Siliconix

SIHG33N65E-GE3

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Reference Price(In US Dollars)

In stock
1+
$7.06
10+
$6.38
25+
$6.084
100+
$5.282
250+
$5.045
Inquiry Online
Specifications
  • Part Number
    SIHG33N65E-GE3
  • Manufacturer/Brand
    Vishay / Siliconix
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 32.4A TO-247AC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SIHG33N65E-GE3.pdf
  • ECAD Model
  • Voltage - Test
    4040pF @ 100V
  • Voltage - Breakdown
    TO-247AC
  • Vgs(th) (Max) @ Id
    105 mOhm @ 16.5A, 10V
  • Vgs (Max)
    10V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    -
  • RoHS Status
    Digi-Reel®
  • Rds On (Max) @ Id, Vgs
    32.4A (Tc)
  • Polarization
    TO-247-3
  • Other Names
    SIHG33N65E-GE3DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    20 Weeks
  • Manufacturer Part Number
    SIHG33N65E-GE3
  • Input Capacitance (Ciss) (Max) @ Vds
    173nC @ 10V
  • IGBT Type
    ±30V
  • Gate Charge (Qg) (Max) @ Vgs
    4V @ 250µA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET N-CH 650V 32.4A TO-247AC
  • Current - Continuous Drain (Id) @ 25°C
    650V
  • Capacitance Ratio
    313W (Tc)

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