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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SQJ431EP-T1_GE3
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6979674SQJ431EP-T1_GE3 ImageVishay Siliconix

SQJ431EP-T1_GE3

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Reference Price(In US Dollars)

In stock
1+
$1.85
10+
$1.662
25+
$1.568
100+
$1.336
250+
$1.255
500+
$1.098
1000+
$0.91
Inquiry Online
Specifications
  • Part Number
    SQJ431EP-T1_GE3
  • Manufacturer/Brand
    Vishay / Siliconix
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CHAN 200V SO8L
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SQJ431EP-T1_GE3.pdf
  • Voltage - Test
    4355pF @ 25V
  • Voltage - Breakdown
    PowerPAK® SO-8
  • Vgs(th) (Max) @ Id
    213 mOhm @ 1A, 4V
  • Vgs (Max)
    6V, 10V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    Automotive, AEC-Q101, TrenchFET®
  • RoHS Status
    Digi-Reel®
  • Rds On (Max) @ Id, Vgs
    12A (Tc)
  • Polarization
    PowerPAK® SO-8
  • Other Names
    SQJ431EP-T1_GE3DKR
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    18 Weeks
  • Manufacturer Part Number
    SQJ431EP-T1_GE3
  • Input Capacitance (Ciss) (Max) @ Vds
    160nC @ 10V
  • IGBT Type
    ±20V
  • Gate Charge (Qg) (Max) @ Vgs
    3.5V @ 250µA
  • FET Feature
    P-Channel
  • Expanded Description
    P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET P-CHAN 200V SO8L
  • Current - Continuous Drain (Id) @ 25°C
    200V
  • Capacitance Ratio
    83W (Tc)

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