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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N2906
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4012971

2N2906

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Specifications
  • Part Number
    2N2906
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    PNP SS GP AMP MED PWR TRANS.
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    2N2906.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Transistor Type
    PNP
  • Supplier Device Package
    TO-18
  • Series
    -
  • Power - Max
    400mW
  • Packaging
    Bulk
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Other Names
    2N2906FS
  • Operating Temperature
    -
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP 40V 600mA 400mW Through Hole TO-18
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA, 10V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    600mA
  • Base Part Number
    2N2906

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