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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N5886G
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9043992N5886G ImageAMI Semiconductor / ON Semiconductor

2N5886G

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Reference Price(In US Dollars)

In stock
1+
$3.91
10+
$3.509
100+
$2.875
500+
$2.447
1000+
$2.064
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Specifications
  • Part Number
    2N5886G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 80V 25A TO3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2N5886G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 6.25A, 25A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-204 (TO-3)
  • Series
    -
  • Power - Max
    200W
  • Packaging
    Tray
  • Package / Case
    TO-204AA, TO-3
  • Other Names
    2N5886GOS
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    19 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    4MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 80V 25A 4MHz 200W Through Hole TO-204 (TO-3)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 10A, 4V
  • Current - Collector Cutoff (Max)
    2mA
  • Current - Collector (Ic) (Max)
    25A
  • Base Part Number
    2N5886

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