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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N6052
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55742012N6052 ImageAMI Semiconductor / ON Semiconductor

2N6052

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Specifications
  • Part Number
    2N6052
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP DARL 100V 12A TO3
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    2N6052.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 120mA, 12A
  • Transistor Type
    PNP - Darlington
  • Supplier Device Package
    TO-204 (TO-3)
  • Series
    -
  • Power - Max
    150W
  • Packaging
    Tray
  • Package / Case
    TO-204AA, TO-3
  • Other Names
    2N6052OS
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP - Darlington 100V 12A 150W Through Hole TO-204 (TO-3)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 6A, 3V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    12A
  • Base Part Number
    2N6052

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