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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N6045G
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24869182N6045G ImageAMI Semiconductor / ON Semiconductor

2N6045G

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Reference Price(In US Dollars)

In stock
1+
$0.81
50+
$0.668
100+
$0.545
500+
$0.431
1000+
$0.345
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Specifications
  • Part Number
    2N6045G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 100V 8A TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2N6045G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    2V @ 12mA, 3A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Power - Max
    75W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    2N6045GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 100V 8A 75W Through Hole TO-220AB
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 3A, 4V
  • Current - Collector Cutoff (Max)
    20µA
  • Current - Collector (Ic) (Max)
    8A
  • Base Part Number
    2N6045

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