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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2N7000RLRA
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2N7000RLRA

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Specifications
  • Part Number
    2N7000RLRA
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 200MA TO-92
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    2N7000RLRA.pdf
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-92-3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    5 Ohm @ 500mA, 10V
  • Power Dissipation (Max)
    350mW (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Other Names
    2N7000RLRAOSCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    60pF @ 25V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 200mA (Ta) 350mW (Tc) Through Hole TO-92-3
  • Current - Continuous Drain (Id) @ 25°C
    200mA (Ta)

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