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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC3646S-TD-E
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24157292SC3646S-TD-E ImageAMI Semiconductor / ON Semiconductor

2SC3646S-TD-E

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Reference Price(In US Dollars)

In stock
1000+
$0.172
2000+
$0.157
5000+
$0.147
10000+
$0.137
25000+
$0.135
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Specifications
  • Part Number
    2SC3646S-TD-E
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 100V 1A SOT89-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SC3646S-TD-E.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 40mA, 400mA
  • Transistor Type
    NPN
  • Supplier Device Package
    PCP
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-243AA
  • Other Names
    2SC3646S-TD-E-ND
    2SC3646S-TD-EOSTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    5 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    120MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 100V 1A 120MHz 500mW Surface Mount PCP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    1A

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