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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC3649T-TD-H
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18552242SC3649T-TD-H ImageAMI Semiconductor / ON Semiconductor

2SC3649T-TD-H

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Reference Price(In US Dollars)

In stock
1000+
$0.212
2000+
$0.193
5000+
$0.18
10000+
$0.168
25000+
$0.166
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Specifications
  • Part Number
    2SC3649T-TD-H
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 160V 1.5A PCP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SC3649T-TD-H.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    160V
  • Vce Saturation (Max) @ Ib, Ic
    450mV @ 50mA, 500mA
  • Transistor Type
    NPN
  • Supplier Device Package
    PCP
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-243AA
  • Other Names
    2SC3649T-TD-H-ND
    2SC3649T-TD-HOSTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    8 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    120MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 500mW Surface Mount PCP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Current - Collector (Ic) (Max)
    1.5A
  • Base Part Number
    2SC3649

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