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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC4135T-E
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28666352SC4135T-E ImageAMI Semiconductor / ON Semiconductor

2SC4135T-E

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Reference Price(In US Dollars)

In stock
1+
$0.65
10+
$0.558
100+
$0.417
500+
$0.328
1000+
$0.253
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Specifications
  • Part Number
    2SC4135T-E
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 100V 2A TP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SC4135T-E.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 100mA, 1A
  • Transistor Type
    NPN
  • Supplier Device Package
    TP
  • Series
    -
  • Power - Max
    1W
  • Packaging
    Bulk
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    2SC4135T-E-ND
    2SC4135T-EOS
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    120MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 100V 2A 120MHz 1W Through Hole TP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    2A
  • Base Part Number
    2SC4135

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