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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD1805G-TL-E
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1152758

2SD1805G-TL-E

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Reference Price(In US Dollars)

In stock
700+
$0.357
1400+
$0.286
2100+
$0.259
4900+
$0.241
17500+
$0.238
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Specifications
  • Part Number
    2SD1805G-TL-E
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 20V 5A TP-FA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SD1805G-TL-E.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    20V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 60mA, 3A
  • Transistor Type
    NPN
  • Supplier Device Package
    2-TP-FA
  • Series
    -
  • Power - Max
    1W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    2SD1805G-TL-E-ND
    2SD1805G-TL-EOSTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    120MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 20V 5A 120MHz 1W Surface Mount 2-TP-FA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    280 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    5A
  • Base Part Number
    2SD1805

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