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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2SJ661-DL-1E
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66927502SJ661-DL-1E ImageAMI Semiconductor / ON Semiconductor

2SJ661-DL-1E

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Reference Price(In US Dollars)

In stock
1+
$2.70
10+
$2.44
100+
$1.961
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Specifications
  • Part Number
    2SJ661-DL-1E
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 60V 38A
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SJ661-DL-1E.pdf
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-263-2
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    39 mOhm @ 19A, 10V
  • Power Dissipation (Max)
    1.65W (Ta), 65W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    2SJ661-DL-1EOSDKR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    9 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4360pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    80nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Surface Mount TO-263-2
  • Current - Continuous Drain (Id) @ 25°C
    38A (Ta)

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