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Home > Products > Discrete Semiconductor Products > Transistors - JFETs > 2SK3666-3-TB-E
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70022782SK3666-3-TB-E ImageAMI Semiconductor / ON Semiconductor

2SK3666-3-TB-E

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Reference Price(In US Dollars)

In stock
1+
$0.49
10+
$0.347
100+
$0.228
500+
$0.135
1000+
$0.104
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Specifications
  • Part Number
    2SK3666-3-TB-E
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    JFET N-CH 10MA 200MW 3CP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SK3666-3-TB-E.pdf
  • ECAD Model
  • Voltage - Cutoff (VGS off) @ Id
    180mV @ 1µA
  • Supplier Device Package
    3-CP
  • Series
    -
  • Resistance - RDS(On)
    200 Ohms
  • Power - Max
    200mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    869-1107-1
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    4 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4pF @ 10V
  • FET Type
    N-Channel
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    JFET N-Channel 10mA 200mW Surface Mount 3-CP
  • Current Drain (Id) - Max
    10mA
  • Current - Drain (Idss) @ Vds (Vgs=0)
    1.2mA @ 10V
  • Base Part Number
    2SK3666

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