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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2SK3564(STA4,Q,M)
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62354212SK3564(STA4,Q,M) ImageToshiba Semiconductor and Storage

2SK3564(STA4,Q,M)

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Reference Price(In US Dollars)

In stock
1+
$1.90
10+
$1.72
50+
$1.536
100+
$1.382
250+
$1.229
500+
$1.075
1000+
$0.891
2500+
$0.829
5000+
$0.799
Inquiry Online
Specifications
  • Part Number
    2SK3564(STA4,Q,M)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 900V 3A TO-220SIS
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.2SK3564(STA4,Q,M).pdf
    2.2SK3564(STA4,Q,M).pdf
  • Voltage - Test
    700pF @ 25V
  • Voltage - Breakdown
    TO-220SIS
  • Vgs(th) (Max) @ Id
    4.3 Ohm @ 1.5A, 10V
  • Vgs (Max)
    10V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    π-MOSIV
  • RoHS Status
    Tube
  • Rds On (Max) @ Id, Vgs
    3A (Ta)
  • Polarization
    TO-220-3 Full Pack
  • Other Names
    2SK3564(Q)
    2SK3564(STA4,Q)
    2SK3564(STA4Q)
    2SK3564(STA4Q)-ND
    2SK3564(STA4QM)
    2SK3564Q
    2SK3564Q-ND
    2SK3564STA4QM
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Part Number
    2SK3564(STA4,Q,M)
  • Input Capacitance (Ciss) (Max) @ Vds
    17nC @ 10V
  • IGBT Type
    ±30V
  • Gate Charge (Qg) (Max) @ Vgs
    4V @ 1mA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-220SIS
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET N-CH 900V 3A TO-220SIS
  • Current - Continuous Drain (Id) @ 25°C
    900V
  • Capacitance Ratio
    40W (Tc)

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