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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > BC847BPDW1T2G
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4756326BC847BPDW1T2G ImageAMI Semiconductor / ON Semiconductor

BC847BPDW1T2G

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Reference Price(In US Dollars)

In stock
1+
$0.25
10+
$0.207
100+
$0.11
500+
$0.072
1000+
$0.049
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Specifications
  • Part Number
    BC847BPDW1T2G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 45V 0.1A SOT363
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BC847BPDW1T2G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    SC-88/SC70-6/SOT-363
  • Series
    -
  • Power - Max
    380mW
  • Packaging
    Original-Reel®
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    BC847BPDW1T2GOSDKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    40 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA, 5V
  • Current - Collector Cutoff (Max)
    15nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

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