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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BCW30LT1G
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5035787BCW30LT1G ImageAMI Semiconductor / ON Semiconductor

BCW30LT1G

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Reference Price(In US Dollars)

In stock
3000+
$0.031
6000+
$0.028
15000+
$0.025
30000+
$0.022
75000+
$0.02
150000+
$0.016
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Specifications
  • Part Number
    BCW30LT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 32V 0.1A SOT-23
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BCW30LT1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    32V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Transistor Type
    PNP
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    -
  • Power - Max
    300mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    BCW30LT1G-ND
    BCW30LT1GOSTR
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP 32V 100mA 300mW Surface Mount SOT-23-3 (TO-236)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    215 @ 2mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    BCW30

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