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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BDV65B
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4600911BDV65B ImageAMI Semiconductor / ON Semiconductor

BDV65B

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Specifications
  • Part Number
    BDV65B
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 100V 10A TO-218
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    BDV65B.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    2V @ 20mA, 5A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    SOT-93
  • Series
    -
  • Power - Max
    125W
  • Packaging
    Tube
  • Package / Case
    TO-218-3
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 100V 10A 125W Through Hole SOT-93
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 5A, 4V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    10A

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