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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > BF199_J35Z
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BF199_J35Z

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Specifications
  • Part Number
    BF199_J35Z
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS RF NPN 25V 50MA TO-92
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BF199_J35Z.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    25V
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-92-3
  • Series
    -
  • Power - Max
    350mW
  • Packaging
    Bulk
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Noise Figure (dB Typ @ f)
    -
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    -
  • Frequency - Transition
    1.1GHz
  • Detailed Description
    RF Transistor NPN 25V 50mA 1.1GHz 350mW Through Hole TO-92-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    38 @ 7mA, 10V
  • Current - Collector (Ic) (Max)
    50mA
  • Base Part Number
    BF199

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