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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BS108G
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3400805

BS108G

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Specifications
  • Part Number
    BS108G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 0.25A TO-92
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BS108G.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-92-3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    8 Ohm @ 100mA, 2.8V
  • Power Dissipation (Max)
    350mW (Ta)
  • Packaging
    Tube
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    150pF @ 25V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2V, 2.8V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92-3
  • Current - Continuous Drain (Id) @ 25°C
    250mA (Ta)

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