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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BSV52LT1G
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1962660BSV52LT1G ImageAMI Semiconductor / ON Semiconductor

BSV52LT1G

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Reference Price(In US Dollars)

In stock
3000+
$0.047
6000+
$0.041
15000+
$0.034
30000+
$0.032
75000+
$0.03
150000+
$0.027
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Specifications
  • Part Number
    BSV52LT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 12V 0.1A SOT-23
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BSV52LT1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 50mA
  • Transistor Type
    NPN
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    -
  • Power - Max
    225mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    BSV52LT1G-ND
    BSV52LT1GOSTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    12 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    400MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 12V 100mA 400MHz 225mW Surface Mount SOT-23-3 (TO-236)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 10mA, 1V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    BSV52

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