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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BUT12A
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BUT12A

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Specifications
  • Part Number
    BUT12A
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 450V 8A TO-220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.BUT12A.pdf
    2.BUT12A.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    450V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 1.2A, 6A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220-3
  • Series
    -
  • Power - Max
    100W
  • Packaging
    Bulk
  • Package / Case
    TO-220-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 450V 8A 100W Through Hole TO-220-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    -
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    8A
  • Base Part Number
    BUT12A

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