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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > EC4H09C-TL-H
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3538305EC4H09C-TL-H ImageAMI Semiconductor / ON Semiconductor

EC4H09C-TL-H

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Specifications
  • Part Number
    EC4H09C-TL-H
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 3.5V 40MA ECSP1008-4
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EC4H09C-TL-H.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    3.5V
  • Transistor Type
    NPN
  • Supplier Device Package
    4-ECSP1008
  • Series
    -
  • Power - Max
    120mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    4-UFDFN
  • Operating Temperature
    150°C (TJ)
  • Noise Figure (dB Typ @ f)
    1.3dB @ 2GHz
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    15dB
  • Frequency - Transition
    26GHz
  • Detailed Description
    RF Transistor NPN 3.5V 40mA 26GHz 120mW Surface Mount 4-ECSP1008
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA, 1V
  • Current - Collector (Ic) (Max)
    40mA

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