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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > ECH8309-TL-H
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5543816ECH8309-TL-H ImageAMI Semiconductor / ON Semiconductor

ECH8309-TL-H

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Reference Price(In US Dollars)

In stock
3000+
$0.283
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Specifications
  • Part Number
    ECH8309-TL-H
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 12V 9.5A ECH8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    ECH8309-TL-H.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    ±10V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-ECH
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    16 mOhm @ 4.5A, 4.5V
  • Power Dissipation (Max)
    1.5W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SMD, Flat Lead
  • Other Names
    ECH8309-TL-H-ND
    ECH8309-TL-HOSTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1780pF @ 6V
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    P-Channel 12V 9.5A (Ta) 1.5W (Ta) Surface Mount 8-ECH
  • Current - Continuous Drain (Id) @ 25°C
    9.5A (Ta)

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