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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > ECH8502-TL-H
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ECH8502-TL-H

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Reference Price(In US Dollars)

In stock
1+
$0.90
10+
$0.807
100+
$0.629
500+
$0.52
1000+
$0.41
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Specifications
  • Part Number
    ECH8502-TL-H
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 100V/50V 5A 8ECH
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    ECH8502-TL-H.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    100V, 50V
  • Vce Saturation (Max) @ Ib, Ic
    120mV @ 125mA, 2.5A
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    8-ECH
  • Series
    -
  • Power - Max
    1.6W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-SMD, Flat Lead
  • Other Names
    ECH8502-TL-HOSCT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    290MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 100V, 50V 5A 290MHz 1.6W Surface Mount 8-ECH
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    5A

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