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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDB0260N1007L

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FDB0260N1007L Image

AMI Semiconductor / ON Semiconductor

FDB0260N1007L

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Reference Price(In US Dollars)

In stock

800+

$4.087

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Specifications

Part Number

FDB0260N1007L
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 100V 200A D2PAK
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FDB0260N1007L.pdf
Vgs(th) (Max) @ Id

4V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

D²PAK (TO-263)
Series

PowerTrench®
Rds On (Max) @ Id, Vgs

2.6 mOhm @ 27A, 10V
Power Dissipation (Max)

3.8W (Ta), 250W (Tc)
Packaging

Tape & Reel (TR)
Package / Case

TO-263-7, D²Pak (6 Leads + Tab)
Other Names

FDB0260N1007LTR
Operating Temperature

-55°C ~ 175°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Manufacturer Standard Lead Time

39 Weeks
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

8545pF @ 50V
Gate Charge (Qg) (Max) @ Vgs

118nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

10V
Drain to Source Voltage (Vdss)

100V
Detailed Description

N-Channel 100V 200A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C

200A (Tc)

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