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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDB1D7N10CL7
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5499980

FDB1D7N10CL7

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Reference Price(In US Dollars)

In stock
800+
$8.456
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Specifications
  • Part Number
    FDB1D7N10CL7
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    FET 100V 1.7 MOHM D2PAK
  • Lead Free Status / RoHS Status
  • Datasheets
    FDB1D7N10CL7.pdf
  • Vgs(th) (Max) @ Id
    4V @ 700µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D²PAK (TO-263)
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    1.65 mOhm @ 100A, 15V
  • Power Dissipation (Max)
    250W (Tc)
  • Package / Case
    TO-263-7, D²Pak (6 Leads + Tab)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Lead Free Status
    Lead free
  • Input Capacitance (Ciss) (Max) @ Vds
    11600pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    163nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 15V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 268A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
  • Current - Continuous Drain (Id) @ 25°C
    268A (Tc)

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