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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDC655BN
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971943FDC655BN ImageAMI Semiconductor / ON Semiconductor

FDC655BN

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Reference Price(In US Dollars)

In stock
1+
$0.55
10+
$0.463
100+
$0.348
500+
$0.255
1000+
$0.197
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Specifications
  • Part Number
    FDC655BN
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 6.3A SSOT-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDC655BN.pdf
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SuperSOT™-6
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    25 mOhm @ 6.3A, 10V
  • Power Dissipation (Max)
    1.6W (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    FDC655BNCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 6.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
  • Current - Continuous Drain (Id) @ 25°C
    6.3A (Ta)

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