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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDD306P
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FDD306P

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Reference Price(In US Dollars)

In stock
2500+
$0.371
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Specifications
  • Part Number
    FDD306P
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 12V 6.7A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDD306P.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-252
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    28 mOhm @ 6.7A, 4.5V
  • Power Dissipation (Max)
    52W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    FDD306P-ND
    FDD306PTR
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    9 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1290pF @ 6V
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    P-Channel 12V 6.7A (Ta) 52W (Ta) Surface Mount TO-252
  • Current - Continuous Drain (Id) @ 25°C
    6.7A (Ta)

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