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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDG314P
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FDG314P

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Specifications
  • Part Number
    FDG314P
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 25V 0.65A SC70-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDG314P.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SC-70-6
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    1.1 Ohm @ 500mA, 4.5V
  • Power Dissipation (Max)
    750mW (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    63pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    1.5nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.7V, 4.5V
  • Drain to Source Voltage (Vdss)
    25V
  • Detailed Description
    P-Channel 25V 650mA (Ta) 750mW (Ta) Surface Mount SC-70-6
  • Current - Continuous Drain (Id) @ 25°C
    650mA (Ta)

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