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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDG312P
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FDG312P

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Reference Price(In US Dollars)

In stock
3000+
$0.164
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Specifications
  • Part Number
    FDG312P
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 1.2A SC70-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDG312P.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SC-70-6
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    180 mOhm @ 1.2A, 4.5V
  • Power Dissipation (Max)
    750mW (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    FDG312P-ND
    FDG312PTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    330pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    5nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 1.2A (Ta) 750mW (Ta) Surface Mount SC-70-6
  • Current - Continuous Drain (Id) @ 25°C
    1.2A (Ta)

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