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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDI8442
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FDI8442

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Specifications
  • Part Number
    FDI8442
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 40V 80A TO-262
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDI8442.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I2PAK (TO-262)
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    2.9 mOhm @ 80A, 10V
  • Power Dissipation (Max)
    254W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    12200pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    235nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    40V
  • Detailed Description
    N-Channel 40V 23A (Ta), 80A (Tc) 254W (Tc) Through Hole I2PAK (TO-262)
  • Current - Continuous Drain (Id) @ 25°C
    23A (Ta), 80A (Tc)

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