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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDMC86261P

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FDMC86261P Image

AMI Semiconductor / ON Semiconductor

FDMC86261P

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Reference Price(In US Dollars)

In stock

1+

$2.02

10+

$1.824

100+

$1.466

500+

$1.14

1000+

$0.945

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Specifications

Part Number

FDMC86261P
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET P-CH 150V 2.7A 8MLP
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FDMC86261P.pdf
Vgs(th) (Max) @ Id

4V @ 250µA
Vgs (Max)

±25V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

8-MLP (3.3x3.3)
Series

PowerTrench®
Rds On (Max) @ Id, Vgs

160 mOhm @ 2.4A, 10V
Power Dissipation (Max)

2.3W (Ta), 40W (Tc)
Packaging

Cut Tape (CT)
Package / Case

8-PowerWDFN
Other Names

FDMC86261PCT
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Manufacturer Standard Lead Time

39 Weeks
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

1360pF @ 75V
Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V
FET Type

P-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

6V, 10V
Drain to Source Voltage (Vdss)

150V
Detailed Description

P-Channel 150V 2.7A (Ta), 9A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C

2.7A (Ta), 9A (Tc)

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