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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDP032N08B-F102
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FDP032N08B-F102

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Reference Price(In US Dollars)

In stock
1+
$3.10
10+
$2.801
100+
$2.251
800+
$1.581
1600+
$1.451
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Specifications
  • Part Number
    FDP032N08B-F102
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 80V 120A TO-220-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDP032N08B-F102.pdf
  • Vgs(th) (Max) @ Id
    4.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    3.3 mOhm @ 100A, 10V
  • Power Dissipation (Max)
    263W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    FDP032N08B_F102
    FDP032N08B_F102-ND
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    10965pF @ 40V
  • Gate Charge (Qg) (Max) @ Vgs
    144nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    80V
  • Detailed Description
    N-Channel 80V 120A (Tc) 263W (Tc) Through Hole TO-220
  • Current - Continuous Drain (Id) @ 25°C
    120A (Tc)

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