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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDP14AN06LA0
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FDP14AN06LA0

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Specifications
  • Part Number
    FDP14AN06LA0
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 67A TO-220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FDP14AN06LA0.pdf
    2.FDP14AN06LA0.pdf
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220AB
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    11.6 mOhm @ 67A, 10V
  • Power Dissipation (Max)
    125W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2900pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 10A (Ta), 67A (Tc) 125W (Tc) Through Hole TO-220AB
  • Current - Continuous Drain (Id) @ 25°C
    10A (Ta), 67A (Tc)

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