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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDR858P
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FDR858P

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Specifications
  • Part Number
    FDR858P
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 30V 8A SSOT-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDR858P.pdf
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SuperSOT™-8
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    19 mOhm @ 8A, 10V
  • Power Dissipation (Max)
    1.8W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SMD, Gull Wing
  • Other Names
    FDR858P-ND
    FDR858PTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2010pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    P-Channel 30V 8A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8
  • Current - Continuous Drain (Id) @ 25°C
    8A (Ta)

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